dr. jyoti prasad bandyopadhyay - nshm...

Durgapur Knowledge Campus |Arrah | Shibtala | Via Muchipara |Durgapur 713 212 |

Mobile No. – 9933049448 | Phone: +91 343-2533813-14 | Fax: +91 0343-2534025| Email: [email protected]

Copyright © NSHM - Knowledge Campus 13-14. All rights reserved

Dr. Jyoti Prasad Bandyopadhyay

Professor

E.C.E

PhD (Tech), FIETE, SMIEEE (USA)

Email:[email protected]

_________________________________________________________________

Detailed Qualification:

Degree Stream/Specialization University Year of

Passing

PhD Impact Avalanche

Transit Time (IMPATT)

Devices

Institute of

Radio

Physics and

Electronics,

University

of Calcutta

1986

Teaching Interests:

Electronics Devices

Electric Circuits

Basic Electrical & Electronics Engineering

Micro & Opto. Electronics

Micro Wave & Antenna




Research Interests:

Electronics Devices

Impatt Diode, Avalanche Diode

Optical Communication

Membership (if any):

(i) Fellow, New York Academy of Science

(ii) Senior Member, IEEE, USA

(iii) Member, Research Board of Advisors, ABI (USA).

(iv) Fellow, Institute of Electronics and Telecommunication Engineers, Delhi

(v)Life member,(a) Semiconductor Society of India,(b) Indian Physics Association (c)

Indian Association for the Cultivation of Science and (d) EMI & EMC Society of India

Research & Publications:

Conference Proceedings:

Title of the Paper Author List Name of the

Conference,

Location

Proceedings

Details

Optimum Design of Low

Power and High

Performance GNR

TFETs

Jayabrata Goswami, Anuva

Ganguly and J. P. Banerjee

6th International

Conference on

Computers and Devices

for Communication

(CODEC), December

16-18, 2015 Kolkata,

India

Proc.of 6th

International

Conference on

Computers and

Devices for

Communication

(CODEC)

Prospect of GNR TFETs

as Potential Terahertz

Sources

AnuvaGanguly,

JayabrataGoswami, and J. P.

Banerjee

Proc.of6th International

Conference on


for Communication

(CODEC), December

16-18, 2015 Kolkata,

India

Proc.of6th

International

Conference on

Computers and

Devices for

Communication

(CODEC)




Optimization of High

Performance GNR

TFETs

AnuvaGanguly,

JayabrataGoswami,

AritraAcharyya and

J.P.Banerjee

International

Conference on

Foundations and

Frontiers in

Communication,

Computer and Electrical

Engineering (C2E2)

2015 will be held on 9th

-10th Jan, SKFGI,

Mankundu, Hooghly,

WB, India, 2015.

Proc. of

International

Conference on

Foundations and

Frontiers in

Communication,

Computer and

Electrical

Engineering (C2E2)

2015

Air Dielectric Barrier

Discharge Plasma

Processing For Surface

Modification Of

Microfluidic Channel

Surfaces For

Bioengineering

Applications

SubhadeepMukhopadhyay and

J. P. Banerjee

30th

National

Symposium on Plasma

Science & Technology (

PLASMA-2015), SINP,

Kolkata

Proc. of 30th

National

Symposium on

Plasma Science &

Technology (

PLASMA-2015)

Nanoscale Coating in

Microfluidic Laboratory-

on-a-Chip Devices

Fabricated by

MicroelectronicTechnol

ogies”, Proc.of 6th

International Conference

on Computers and

Devices for

Communication

(CODEC), December

16-18, 2015 Kolkata,

India

Subhadeep Mukhopadhyay and

J. P. Banerjee

6th International

Conference on


for Communication

(CODEC), December

16-18, 2015 Kolkata,

India

Proc.of 6th

International

Conference on

Computers and

Devices for

Communication

(CODEC),

Design Optimization and

Large-Signal Simulation

of DLHL Si IMPATT

Diode at 60 GHz

Suranjana Banerjee,

AritraAcharyya,J. P.

Banerjeeand MonijitMitra

International

Conference on

Computer,

Communication,

Control and Information

Technology (C3IT),

Academy of

Technology,

Adisaptagram, Hooghly

712121, West Bengal,

India, February 7-8,

2015

Proc. of

International

Conference on

Computer,

Communication,

Control and

Information

Technology (C3IT)

http://c2e2.skf.edu.in/














94 GHz Multiquantum

Well IMPATT Diodes

based on 3C-SiC/Si

Material System

Suranjana Banerjee,

AritraAcharyya,J. P. Banerjee,

and MonijitMitra

International

Conference on

Computer,

Communication,


Technology (C3IT),

Academy of

Technology,

Adisaptagram, Hooghly

712121, West Bengal,

India, February 7-8,

2015.

Proc. of

International

Conference on

Computer,

Communication,

Control and

Information

Technology (C3IT)

Large-Signal and Noise

Properties of

Heterojunction DDR

IMPATTs Based on

AlxGa1-xN~GaN

Material System at 1.0

THz,”,”,

Suranjana Banerjee,

AritraAcharyya,J. P. Banerjee,

and MonojitMitra

International

Conference on

Foundations and

Frontiers in

Communication,

Computer and Electrical

Engineering (C2E2)

2015 held on 9th -10th

Jan, SKFGI, Mankundu,

Hooghly, WB, India,

2015.

Proc.of

International

Conference on

Foundations and

Frontiers in

Communication,

Computer and

Electrical

Engineering (C2E2)

2015

Large-signal Properties

of 3C-SiC/Si

Heterojunction DDR

IMPATT Devices at

Terahertz Frequencies

Suranjana Banerjee,

AritraAcharyya, MonojitMitra

and J. P. Banerjee

The 34th

PIERS in

Stockholm, Sweden

pp. 462-467,

August12-15, 2013

Effects of Quantum

Correction on the Large-

Signal Characteristics of

DDR IMPATTs Based

on Silicon

AritraAcharyya,

JayabrataGoswami, Suranjana

Banerjee, and J. P. Banerjee

National Conference on

Materials, Devices and

Circuits in

Communication

Technology, Burdwan,

7th

and 8th

February,

2014, pp. 1

In Proceedings of

National

Conference on

Materials, Devices

and Circuits in

Communication

Technology,

Burdwan

Millimeter-wave and

Noise Properties of

Si~Si1-

xGexHeterojunction

Double-Drift Region

MITATT Devices at 94

Suranjana Banerjee,

AritraAcharyya and J. P.

Banerjee

CODEC 2012, Kolkata,

India

Proc. Of CODEC

2012, Kolkata,

India















GHz

A proposed Method to

Study the Parasitic

Resistance of Ka-Band

Silicon IMPATT Diode

From Large-Signal

Electric Field Snap-

Shots

AritraAcharyya, Suranjana

Banerjee and J. P. Banerjee

CODIS-2012, Jadavpur

University, W. B., India

Proc. Of CODIS-

2012, Jadavpur

University, W. B.,

India

High Frequency

Performance limitations

of Si, GaAs and InP

IMPATTs based on

Avalanche Response

Time,”


Banerjee and J. P. Banerjeein


E2NC 2012, SKFGI,

Mankundu, Hooghly,

W. B., India, February

3-4, 2012, pp. 1-4

Proceedings of

National

Conference on

E2NC 2012

Dependence of noise

properties on photon

flux incident on Silicon

MITATT device at

millimeter-wave window

frequencies,”,

Suranjana Banerjee,

AritraAcharyya, J. P. Banerjee

and M. Mitra

International

Conference on

Computer,

Communication,


Technology 2012,

Academy of

Technology, W. B.,

India, Procedia

Technology, Elsevier,

February 25-26, 2012,

vol. 4, pp. 431-436

Proceedings of

International

Conference on

Computer,

Communication,

Control and

Information

Technology 2012

Large-Signal Properties

of Diamond IMPATTs

at 94 GHz



IET International

Conference on

Information Science and

Control Engineering,

2012

Dependence of

Avalanche Response

Time on Photon Flux

Incident on DDR Silicon

IMPATT Devices


Banerjee

The 32nd PIERS in

Moscow, Russia,

August 19-23, 2012

A Proposed Lateral

DDR IMPATT Structure

for better Millimeter-

wave Optical

Interaction”, ,


Banerjee

IEEE International

Conference on Devices,

Circuits and Systems

2012, Karunya

University, Coimbatore,

Tamil Nadu, India,

pp. 599-602, March

15-16, 2012

Laser Illumination on

Semiconductor

Avalanche Transit Time

J. P. Banerjee, National Seminar on

recent trends in

condensed matter

Proc. National

Seminar on recent

trends in condensed




Devices Physics including Laser

application,

BurdwanUniversity,WB

,India, March - 2012.

matter Physics

including Laser

application,

Effect of Photo

Irradiation on the

Avalanche Response

Time of Millimeter-

wave DDR Silicon

IMPATTs

JayantaMukhopadhyay,AritraA

charyya and J. P. Banerjee

National seminar on

recent trends in

condensed matter

Physics including laser

application,


,India, March,2012.

Proc. National

seminar on recent

trends in condensed

matter Physics

including laser

application,

BurdwanUniversity

Effect of optical

illumination on the

millimeter wave

properties of lateral and

vertical structures of

Silicon IMPATT device

AritraAcharya, Suranjana


UGC sponsored seminar

on recent trends in

Optoelectronics,.Jiaganj,

Murshidabad,WB,,

India, February,2012.

”,Proc.of UGC

sponsored seminar

on recent trends in

Optoelectronics,.Jia

ganj,

Murshidabad,WB

Effect of Junction

Temperature on the

Millimeter-wave

Performance of DDR

Silicon IMPATT Device



National Conf. on

Materials , Devices and

Circuits in

Communication

Technology (MDCCT

2012),


, India.

Proc. National

Conf. on Materials ,

Devices and

Circuits in

Communication

Technology

(MDCCT 2012),

BurdwanUniversity

,WB, India.

Terahertz Solid State

Sources for Terrestrial

Communication”,

J. P. Banerjee International Conf. on

Microwave, Antenna

and Remote Sensing

(ICMARS-2011),

Jodhpur, India

an Invited

paper,Proc.

International Conf.

on Microwave,

Antenna and

Remote Sensing

(ICMARS-2011),

Jodhpur, India

Effect of mobile space

charge on Si and 4H -

SiC based double drift

IMPATTs at sub-

millimeter wave window

frequency”,

NiratyayBiswas, Moumita

Mukherjee and J. P. Banerjee

International conference

on Microwave, Aneanna

and Remote Sensing

(ICMARS-2011),

Jodhpur, India

Proc. International

conference on

Microwave,

Aneanna and

Remote Sensing

(ICMARS-2011),

Jodhpur, India

Terahertz Performance

of Wz-GaN based DDR

Soumen Banerjee, Moumita

Mukherjee, Soma Rani Karan,

National Conference

MDCCT,BU,WB,India




IMPATT Devices Priyanka Roy Chowdhury,

Payel Roy, Ankita Choudhury

and J. P. Banerjee

(2010).

Effects of impurity

bumps on static and

dynamic characteristics

of group IV-IV SiC-

based IMPATT at Ka-

band

Moumita Mukherjee and J. P.

Banerjee

National Conference

MDCCT, (2010)

Simulation of the circuit

characteristics of a

millimeter-wave pulsed

IMPATT oscillator

embedded in a reduced –

height cavity

Arijit Das,

DiptadipChakraborty, J. Sanyal

and J. P. Banerjee

National Conference

MDCCT,( 2010)

Temperature

Distribution in a Mesa

Structure of Si-IMPATT

diode on a Semi-infinite

copper heat sink

B. Pal, A Acharya, Arijit Das

and J. P. Banerjee,

National Conference

MDCCT, (2010).

Studies on the

performance of Wz-GaN

DDR IMPATT diode at

optimum bias current for

THz frequencies

S. Banerjee, Moumita

Mukherjee and J. P. J. P.

Banerjee, AritraAcharyya and

Suranjana Banerjee

Temperature Transient

Effect on the Large-

Signal Properties and

Frequency Chirping in

Pulsed Silicon DDR

IMPATTs at 94 GHz”,


India

High Frequency

Performance

limitationsof Si, GaAs

and InP IMPATTs

based on Avalanche

Response Time

AritraAcharyya,Suranjana

Banerjee and J.P. Banerjee

National Conf.( E2NC),

SKFGI, Mankundu,

Hooghly,WB,India,

2012

Proc. National

Conf.( E2NC),

SKFGI, Mankundu,

Hooghly,WB,India,

2012

DDR Pulsed IMPATT

sources at MM-wave

window frequency: high

power operation mode


Banerjee,

IEEE EDS Int. Conf. on

IEEE Micro/Nano

Devices, Structures and

Systems, Tamilnadu,

India, (MiNDSS-2010)

MM-wave performance

of DDR IMPATTs based

on cubic SiC

Moumita Mukherjee, S.


International Conf. on

Physics of

Semiconductor Devices,

XVth

IWPSD-2009,

New Delhi, India,

(December, 2009).

Proc. Of

International Conf.

on Physics of

Semiconductor

Devices, XVth

IWPSD-2009, New




Delhi, India,

(December, 2009).

Mobile space-charge

effect on Terahertz

properties of Wz-GaN

based DDR IMPATT

oscillators


Banerjee and J. P. Banerjee,


Devices, Circuits and

Systems ( CODEC ) ,

Kolkata, India,

(December ,2009).

Proc. International

Conf. on Devices,

Circuits and

Systems ( CODEC

) , Kolkata, India,

(December ,2009).

Direct optical injection

locking of a Ka-band Si

SDR IMPATT diode for

low-phase noise”,

Arijit Das, Moumita

Mukherjee, P. Bhattacharya, J.

P. Banerjee and S. K. Roy,

International

Symposium on

Microwave (ISM),

Bangalore, India,

(2008).

Proc. of

International

Symposium on

Microwave (ISM),

Bangalore, India,

(2008).

A proposed theoretical

model of impact

ionization rate under

carrier degeneracy

considering different

scattering phenomena” ,

Soumen Banerjee and J. P.

Banerjee,

International

Conference on

Microwave -08,

University of Rajasthan,

India. pp. 708-711,

(2008).

Proc. of

International

Conference on

Microwave -08,

University of

Rajasthan, India.

pp. 708-711,

(2008).

MM-wave properties of

photo-illuminated

double drift Indium

Phosphide IMPATTs at

elevated temperature

Moumita Mukherjee, J.

Mukherjee and J. P. Banerjee,

International Conf.

IEEE-ICMMT, China,

p. 334. (2008).

Proceedings of

International Conf.

IEEE-ICMMT,

China, p. 334.

(2008).

Effect of LASER

radiation on Si (100) p-n

junction : Simulation

studies and experimental

realization

M. Mukherjee, N. C. Mondal,

P. Bhattacharyya, J. P.

Banerjeeand S. K. Roy.

International

Symposium on

Microwave (ISM),

Bangalore, India (2008).

Proc. of

International

Symposium on

Microwave (ISM),

Bangalore, India

(2008).




low phase noise

A. Das, M. Mukherjee, P.

Bhattacharyya, N. C. Mondal,

M. K. Pandit, J. P. Banerjee

and S. K. Roy

International

symposium (ISM),


Proc. of

International

symposium (ISM),

Bangalore, India

(2008).




Effect of punch through

on the breakdown

characteristics of 4H-

SiC IMPATT Diode

S. Banerjee and J. P. Banerjee, International

Conference on

Microwave 2008,


India, pp. 59-62, (2008)

Proc. of

International

Conference on

Microwave 2008,

University of

Rajasthan, India,

pp. 59-62, (2008)

Effect of optical

illumination on the

millimeter wave

properties of lateral and

vertical structures of

Silicon IMPATT device

AritraAcharya, Suranjana


UGC sponsored seminar

on recent trends in

Optoelectronics,.Jiaganj,

Murshidabad,WB,,

India, February,2012

Proc.of UGC

sponsored seminar

on recent trends in

Optoelectronics,.Jia

ganj,

Murshidabad,WB,,

India,

February,2012

Effect of Junction

Temperature on the

Millimeter-wave

Performance of DDR

Silicon IMPATT Device



National Conf. on

Materials , Devices and

Circuits in

Communication

Technology (MDCCT

2012),


, India

Proc. National

Conf. on Materials ,

Devices and

Circuits in

Communication

Technology

(MDCCT 2012),

BurdwanUniversity

,WB, India

Terahertz Solid State

Sources for Terrestrial

Communication

J. P. Banerjee, an Invited paper International Conf. on

Microwave, Antenna

and Remote Sensing

(ICMARS-2011),

Jodhpur, India

,Proc. International

Conf. on

Microwave,

Antenna and

Remote Sensing

(ICMARS-2011),

Jodhpur, India

Effect of mobile space

charge on Si and 4H -

SiC based double drift

IMPATTs at sub-

millimeter wave window

frequency

NiratyayBiswas, Moumita


International conference

on Microwave, Aneanna

and Remote Sensing

(ICMARS-2011),

Jodhpur, India

Proc. International

conference on

Microwave,

Aneanna and

Remote Sensing

(ICMARS-2011),

Jodhpur, India

Terahertz Performance

of Wz-GaN based DDR

IMPATT Devices

Soumen Banerjee, Moumita

Mukherjee, Soma Rani Karan,

Priyanka Roy Chowdhury,

National Conference

MDCCT,BU,WB,India

(2010).




Payel Roy, Ankita Choudhury

and J. P. Banerjee

Effects of impurity

bumps on static and

dynamic characteristics

of group IV-IV SiC-

based IMPATT at Ka-

band


Banerjee,

National Conference

MDCCT, (2010).

“Simulation of the

circuit characteristics of

a millimeter-wave

pulsed IMPATT

oscillator embedded in a

reduced – height cavity

Arijit Das,

DiptadipChakraborty, J. Sanyal

and J. P. Banerjee,

National Conference

MDCCT,( 2010)

Temperature

Distribution in a Mesa

Structure of Si-IMPATT

diode on a Semi-infinite

copper heat sink

B. Pal, A Acharya, Arijit Das

and J. P. Banerjee

National Conference

MDCCT, (2010).

Studies on the

performance of Wz-GaN

DDR IMPATT diode at

optimum bias current for

THz frequencies”,



Banerjee,


India

Temperature Transient

Effect on the Large-

Signal Properties and

Frequency Chirping in

Pulsed Silicon DDR

IMPATTs at 94 GHz



Banerjee


India

High Frequency

Performance

limitationsof Si, GaAs

and InP IMPATTs

based on Avalanche

Response Time”,


Banerjee and J.P. Banerjee,

National Conf.( E2NC),

SKFGI, Mankundu,

Hooghly,WB,India,

2012

Proc. National

Conf.( E2NC),

SKFGI, Mankundu,

Hooghly,WB,India,

2012

DDR Pulsed IMPATT

sources at MM-wave

window frequency: high

power operation mode”,


Banerjee,

IEEE EDS Int. Conf. on

IEEE Micro/Nano

Devices, Structures and

Systems, Tamilnadu,

India, (MiNDSS-2010)

MM-wave performance

of DDR IMPATTs based




Physics of

Proc. Of

International Conf.




on cubic SiC”, , Semiconductor Devices,

XVth

IWPSD-2009,

New Delhi, India,

(December, 2009)

on Physics of

Semiconductor

Devices, XVth

IWPSD-2009, New

Delhi, India,

(December, 2009)

Mobile space-charge

effect on Terahertz

properties of Wz-GaN

based DDR IMPATT

oscillators”, ,




Devices, Circuits and

Systems ( CODEC ) ,

Kolkata, India,

(December ,2009)

Proc. International

Conf. on Devices,

Circuits and

Systems ( CODEC

) , Kolkata, India,

(December ,2009)




low-phase noise”,

Arijit Das, Moumita

Mukherjee, P. Bhattacharya, J.

P. Banerjee and S. K. Roy,

International

Symposium on

Microwave (ISM),

Bangalore, India, (2008)

Proc. of

International

Symposium on

Microwave (ISM),

Bangalore, India,

(2008)

A proposed theoretical

model of impact

ionization rate under

carrier degeneracy

considering different

scattering phenomena

Soumen Banerjee and J. P.

Banerjee,

International

Conference on

Microwave -08,


India. pp. 708-711,

(2008).

Proc. of

International

Conference on

Microwave -08,

University of

Rajasthan, India.

pp. 708-711,

(2008).

MM-wave properties of

photo-illuminated

double drift Indium

Phosphide IMPATTs at

elevated temperature

Moumita Mukherjee, J.


International Conf.

IEEE-ICMMT, China,

p. 334. (2008).

Proceedings of

International Conf.

IEEE-ICMMT,

China, p. 334.

(2008).

Effect of LASER

radiation on Si (100) p-n

junction : Simulation

studies and experimental

realization

M. Mukherjee, N. C. Mondal,

P. Bhattacharyya, J. P.

Banerjeeand S. K. Roy.

International

Symposium on

Microwave (ISM),


Proc. of

International

Symposium on

Microwave (ISM),

Bangalore, India

(2008).




low phase noise

A. Das, M. Mukherjee, P.

Bhattacharyya, N. C. Mondal,

M. K. Pandit, J. P. Banerjee

and S. K. Roy.

International

symposium (ISM),


Proc. of

International

symposium (ISM),

Bangalore, India

(2008).

Effect of punch through

on the breakdown

characteristics of 4H-

S. Banerjee and J. P. Banerjee International

Conference on

Microwave 2008,

Proc. of

International

Conference on




SiC IMPATT Diode University of Rajasthan,

India, pp. 59-62, (2008)

Microwave 2008,

University of

Rajasthan, India,

pp. 59-62, (2008)

Si / Si1-xGex DDR

IMPATTs as a potential

source for Millimeter

wave applications,

S. Banerjee, D. Chakraborty

and J. P. Banerjee


Device, Intelligent

systems and

Communication &

Networking (AEC-

DISC), Asansol, India,

pp. 187-192 (2008).

Proc. of National

Conference on

Device, Intelligent

systems and

Communication &

Networking (AEC-

DISC), Asansol,

India, pp. 187-192

(2008).

“Large signal model to

simulate the high

frequency properties of

optically controlled

IMPATT devices”, ,

J. P. Banerjee, S. Banerjee, I.

Ali and S. K. Ray

International

Conference on Radio

Science (ICRS),

Jodhpur, India (2008)

Proc. of IVth

International

Conference on

Radio Science

(ICRS), Jodhpur,

India (2008)

Mobile space charge

effect in 4H Silicon

Carbide IMPATT

diodes” ,

S. Mukherjee, S. Banerjee, J.


IWPSD, 2007, IIT

(Mumbai) & TIFR,

India, pp. 268-272

(2007).

Proc. of IWPSD,

2007, IIT (Mumbai)

& TIFR, India, pp.

268-272 (2007).

Space charge effect in

silicon carbide SDR

Impatts

J. Mukhopadhyay and J. P.

Banerjee,

International

Conference on

Computers, Devices and

Communication

(CODEC-04), Institute

of RadioPhysics and

Electronics, University

of Calcutta, p.41

(2004),India.

Proc. of

International

Conference on

Computers,

Devices and

Communication

(CODEC-04),

Institute of

RadioPhysics and

Electronics,

University of

Calcutta, p.41

(2004),India.

Monte Carlo simulation

of noisy noise in

Electronic Devices”, ,

K. K. Ghosh, J. P. Banerjee and

K.P. Ghatak

International Workshop

on Physics of

Semiconductor Devices

(XII),India,(Narosa

Publishing House),

Vol.1, pp. 579-581

Proc.ofInternational

Workshop on

Physics of

Semiconductor

Devices

(XII),India,(Narosa




(2003). Publishing House),

Vol.1, pp. 579-581

(2003).

On the density of states

functions in degenerate

Infrared and

Optoelectronic

materials”, ,

K.P. Ghatak, J.

Mukhopadhyay, K.K. Ghosh

and J. P. Banerjee


on Physics of


(XII),India,(Narosa

Publishing House),

Vol.2, pp. 956-958

(2003).


Workshop on

Physics of

Semiconductor

Devices

(XII),India,(Narosa

Publishing House),

Vol.2, pp. 956-958

(2003).

Optical control of DC

and Micro-wave

properties of Silicon

Carbide Avalanche

Transit Time Diodes”, ,

J. Mukhopadhyay, K.P. Ghatak

and J. P. Banerjee


on Physics of


(XII),India,(Narosa

Publishing House), Vol.

1, pp.956-958 (2003).


Workshop on

Physics of

Semiconductor

Devices

(XII),India,(Narosa

Publishing House),

Vol. 1, pp.956-958

(2003).

A theoretical model of

photo generation of

carriers in solar cells

based on direct bandgap

materials

T.P. Das and J. P. Banerjee International Workshop

on Physics of


(XII),India,(Narosa

Publishing House),

Vol.1, pp. 537-539

(2003).

,Proc.ofInternationa

l Workshop on

Physics of

Semiconductor

Devices

(XII),India,(Narosa

Publishing House),

Vol.1, pp. 537-539

(2003).

A generalized theoretical

model of Impatt

Ionization Rate in

Reverse Biased p-n

Junction”,

T.P. Das and J. P. Banerjee International Workshop

on Physics of


(XII),India,(Narosa

Publishing House),

Vol.1, pp. 534-536

(2003).


Workshop on

Physics of

Semiconductor

Devices

(XII),India,(Narosa

Publishing House),

Vol.1, pp. 534-536

(2003).

Quantum Tunneling

transport in MISIM

nanostructure by using

Double Box method

T.P. Das and J. P. Banerjee Proc. of International

Workshop on Physics of


(XII),India,(Narosa

Proc. of

International

Workshop on

Physics of




Publishing House)

Vol.1,pp.531-

533(2003).

Semiconductor

Devices

(XII),India,(Narosa

Publishing House)

Vol.1,pp.531-

533(2003).

A proposed

Optoelectronic high

pressure sensor

T.P.Das and J. P. Banerjee National Conference in

Sensor Technology

(NCST),Delhi , (2002).

Proc. of National

Conference in

Sensor Technology

(NCST),Delhi ,

(2002).

Modeling and

Simulation of the

Breakdown

characteristics of 4H

silicon Carbide

Avalanche Diodes

J. Mukhopadyay, S. Karmakar,

S. De, A.K. Mukherjee, G.

Majumder and J. P. Banerjee

International

Conference of

Manufacturing ICM

2002, Bangladesh

University of

Engineering and

Technology. Dhaka,

August (2002).

proceedings of

International

Conference of

Manufacturing ICM

2002, Bangladesh

University of

Engineering and

Technology.

Dhaka, August

(2002).

The Einstein Relation in

Ultrathin films of

Ternary and Quaternary

Alloys in the presence of

an arbitrarily oriented

magnetic field

K.P. Ghatak, J. Mukhopadhyay

and J. P. Banerjee,


on the Physics of


Vol.1, pp.347-355

(2001).

Proc. XIth

International

Workshop on the

Physics of

Semiconductor

Devices, Vol.1,

pp.347-355 (2001).

The Magnetic

Susceptibility in

Quantum Wires of

Dilute Magnetic

materials” ,

K.P. Ghatak, P.K. Bose and J.

P. Banerjee,


on the Physics of


Vol.1, pp. 351-355

(2001)

Proc. XIth

International

Workshop on the

Physics of

Semiconductor

Devices, Vol.1, pp.

351-355 (2001)

A simple theoretical

analysis of the electronic

contribution to the

elastic constants in

strained layer

superlattices of non-

parabolic

semiconductors under

magnetic quantization

K.P. Ghatak, J. Mukhopadhyay

and J. P. Banerjee


on the Physics of


V.2, p. 1299 (2001)

Proc. XIth

International

Workshop on the

Physics of

Semiconductor

Devices, V.2, p.

1299 (2001)

On the photoemission K.P. Ghatak, J.Mukhopadhyay International Workshop Proc. XIth




from A3IIB2

VI

nanostructures”,

and J. P. Banerjee, on the Physics of


Vol.2, p.1296 (2001)

International

Workshop on the

Physics of

Semiconductor

Devices, Vol.2,

p.1296 (2001)

On the photoemission

from A3IIB2

VI

nanostructures”,

K.P. Ghatak, J.Mukhopadhyay

and J. P. Banerjee,


on the Physics of


Vol.2, p.1296 (2001)

Proc. XIth

International

Workshop on the

Physics of

Semiconductor

Devices, Vol.2,

p.1296 (2001)

Studies on the effect of

illumination on the

avalanche noise and

related millimeter-wave

properties of W-Band

p+nn

+InPImpatts” , ,

J. Mukhopadhyay, P.K. Bose

and J. P. Banerjee


on the Physics of


Vol.2, pp.891-893

(2001).

Proc. XIth

International

Workshop on the

Physics of

Semiconductor

Devices, Vol.2,

pp.891-893 (2001).

Computer Simulation

Studies of

heterostructure Impatts

based on Si1-XGeX / Si at

W-band frequencies


Banerjee, A. Chakraborty


on the Physics of


Vol. 2, pp.857-860

(2001).

Proc. XIth

International

Workshop on the

Physics of

Semiconductor

Devices, Vol. 2,

pp.857-860 (2001).

Quantum Mechanical

Model of MISIM

nanostructures

T.P. Das, Soumen Banerjee and

J. P. Banerjee


on the Physics of


Vol.1, pp. 338-342

(2001).

Proc. XIth

International

Workshop on the

Physics of

Semiconductor

Devices, Vol.1, pp.

338-342 (2001).

Noise behaviour in

InP/InGaAs Superlattice

Avalanche

Photodetectors for Fibre

Optic Communication

Systems”, ,

C. Kumar, J, Mukhopadhyay,

K.K. Ghosh and J.P. Banerjee


on the Physics of


Vol-1, pp. 203-207

(2001)

Proc. XIth

International

Workshop on the

Physics of

Semiconductor

Devices, Vol-1, pp.

203-207 (2001)

Effect of optical

injection of minority

carriers on the negative

resistance and


Banerjee

APSYM 2000, National

Symp. on Antenna

&propogation, Cochin

University of Science

Proc. of APSYM

2000, National

Symp. on Antenna

&propogation,




admittance of W-Band

DDR InPImpatts”, ,

and Technology,

Cochin, pp. 246-247

(2000).

Cochin University

of Science and

Technology,

Cochin, pp. 246-

247 (2000).

Optimization of Bump

Parameters of 94GHz

Low-High-Low Impatts

under optical

illumination”, ,

J. Mukhopadhyay, P.P.

Bhattacharya and J. P. Banerjee

Symp. on advances in

Microwave, Millimeter-

wave and Infrared

Technology (SAMMIT

99), Calcutta, p.47

(1999).

Proc. Symp. on

advances in

Microwave,

Millimeter-wave

and Infrared

Technology

(SAMMIT 99),

Calcutta, p.47

(1999).

Optical control of RF

properties of 94 GHz

Low-High-Low Indium

Phosphide Impatts

through the variation of

Bump Width” , ,


Banerjee

INCURSI (International

Conference of the Union

of Radio Science,

India), Burdwan

University, Burdwan,

p.c-91, (1999).

Proc. INCURSI

(International

Conference of the

Union of Radio

Science, India),

Burdwan

University,

Burdwan, p.c-91,

(1999).

Quasi Read DDR

Impatts for millimeter-

wave communication at

W-band frequencies,

J. P. Banerjee Symp. on recent trends

in Electronics and

Communication

Technology beyond

2000, IETE, Calcutta

(1998).

Proc. Symp. on

recent trends in

Electronics and

Communication

Technology beyond

2000, IETE,

Calcutta (1998).

Simulation of noise

properties of avalanche

photodetectors”, J. P.

Banerjee, K. Biswas, S.

Mukherjee, ,

J. Mukhopadhyay and D. N.

Bose

XXIV NatioalSymp. of

the optical society of

India in Optics and

Opto-electronics,

Calcutta

Proc. XXIV

NatioalSymp. of the

optical society of

India in Optics and

Opto-electronics,

Calcutta, TS-vi A-

7, p.62 (1997).

Double-Drift Single and

Double Low-High-Low

Impatt diodes for

improvement of device

performance


Banerjee,

DAE Solid State

Physics Symp., Bhaba

Atomic Research

Centre, Mumbai,

DAE Solid State

Physics Symp.,

Bhaba Atomic

Research Centre,

Mumbai, Vol. 39C,

p.424 (1996).

Bias current

optimization of double

J. Mukhopadhyay, R.


Symp. On Frontiers of

Radio Science,

Proc. Symp. On

Frontiers of Radio




drift InP diode at 94 and

140 GHz windows”,

INCURSI (Indian

National Committee for

the International Union

of Radio Science),

Calcutta and Burdwan,

p.XI, 9-12 (1996).

Science, INCURSI

(Indian National

Committee for the

International Union

of Radio Science),

Calcutta and

Burdwan, p.XI, 9-

12 (1996).

Studies on the optical

control of millimeter-

wave Impatt devices by

computer simulation and

modeling techniques

J. P. Banerjee and R.

Mukherjee

SPIE Conf. on Physics

and Simulation of

optoelectronic Devices

II, Los Angeles USA

(1994).

Effect of avalanche

expansion in Silicon

DDRs for operation in

F,D and G bands

S. P. Pati, J. P. Banerjee and S.

K. Roy

International

Conference on

Millimeter wave and

Microwave, Defence

Electronics Application

Laboratory, Dehra Dun

(India), p.131 (1990).

Proc. International

Conference on

Millimeter wave

and Microwave,

Defence Electronics

Application

Laboratory, Dehra

Dun (India), p.131

(1990).

design considerations of

mm-wave silicon double

Read Impatt Diodes

J. P. Banerjee, S. P. Pati and S.

K. Roy


Semiconductor

Materials and Devices,

Delhi ,India (1988).

Proc. International

Conf. on

Semiconductor

Materials and

Devices, Delhi

,India (1988).

Studies of Low-High-

Low and High-Low

Impatts based on GaAs

and InP for mm-wave

frequencies

J. P. Banerjee and S.K. Roy, International Conf. on

Millimeter wave and

Microwave, Defence

Electronics Application

Laboratory, Dehra Dun

(India),

Proc. International

Conf. on Millimeter

wave and

Microwave,

Defence Electronics

Application

Laboratory, Dehra

Dun (India), p.138

(1990).

Design of diffusion

profile for optimum

performance of SDR

silicon Impatts

J. P. Banerjee, M. Mitra, A.

Ganguly and S. K. Roy

National Conf. on

Electronic Circuits and

Systems, Roorkee

University, Roorkee

,India

, Proc. National

Conf. on Electronic

Circuits and

Systems, Roorkee

University,

Roorkee ,India,

p.501 (1989).




Tunability of Silicon

DAR diode over discrete

microwave frequency

bands


K. Roy


Electronic Circuits and

Systems, Roorkee

University ,India,

(1989).

Proc. National

Conference on

Electronic Circuits

and Systems,

Roorkee University

,India, (1989).

A Study on the

breakdown

characteristics of Indium

Phosphide avalanche

diode using

experimental ionization

rates of charge carriers

in InP


K. Roy

International on Conf.

Semiconductor


Delhi (1988).

Proc. International

on Conf.

Semiconductor

Materials and

Devices, Delhi

(1988).

High power design

considerations of mm-

wave silicon double

Read Impatt Diodes


K. Roy


Semiconductor


Delhi ,India (1988)

Proc. International

Conf. on

Semiconductor

Materials and

Devices, Delhi

,India (1988)

Heavy bias current

characteristics of high

efficiency silicon double

drift diodes

J. P. Banerjee and S. K. Roy International

Symposium on

Electronic circuits and

systems, IIT Kharagpur

(India)

, Proc. International

Symposium on

Electronic circuits

and systems, IIT

Kharagpur (India),

p.457 (1987).

Oscillatory behaviour of

high frequency negative

resistance of Si n+pp

+

and p+nn

+Impatt diodes

with enhancement of

reverse saturation

current

N. Mazumder, J. P. Banerjee

and S. K. Roy

Symposium on

Electronic

Communication,

Burdwan (India), p.97

(1987).

Proc. Symposium

on Electronic

Communication,

Burdwan (India),

p.97 (1987).

Effect of crystal

orientation on

microwave

characteristics of

GaAsp+nn

+ avalanche

diode”, ,).


K. Roy

Solid State Physics

Symposium, BARC,

Bombay (1987

Proc. Solid State

Physics

Symposium,

BARC, Bombay

(1987




Silicon Impatt diode as a

solid state device for

mm-wave

communication system

J.P. Banerjee and S. K. Roy 1st Indian Engg.

Congress, Calcutta

Proc. of 1st Indian

Engg. Congress,

Calcutta ,pp.I-IIB,

07-01 - 07-09,

(Jan. 1987)

Computer aided design

and optimization of

double drift region

Indium Phosphide

Impatts with Low-High-

Low doping profile


K. Roy

National Seminar on

Semiconductors and

Devices, Calcutta, (Dec.

1986).

ProcVIth

National

Seminar on

Semiconductors

and Devices,

Calcutta, (Dec.

1986).

Studies of the effect of

carrier current

multiplications on the

negative resistance

profiles and the

admittance

characteristics of p+nn

+

IMPATTs

N. Mazumder, J. P. Banerjee

and S. K. Roy

VIth

National seminar on

Semiconductors and

Devices, Calcutta, (Dec.

1986).

Proc. VIth

National

seminar on

Semiconductors

and Devices,

Calcutta, (Dec.

1986).

study on the effect of

temperature on d.c. and

high frequency

properties of silicon

double drift Impatts


K. Roy

VIth

National Seminar

on Semiconductors and

Devices, Calcutta, (Dec

1986)

Proc. VIth

National

Seminar on

Semiconductors

and Devices,

Calcutta, (Dec

1986)

Studies of the high

frequency negative

resistance profiles and

the admittance

characteristics of p+nn

+

and n+pp

+ Indium

Phosphide IMPATTs


K. Roy

Proc. Fifth National

Seminar on the Physics

of Semiconductors and

Devices, Varanasi, P.

G1 (1986).

Proc. Fifth National

Seminar on the

Physics of

Semiconductors

and Devices,

Varanasi, P. G1

(1986).

Computer studies on the

properties of millimeter-

wave InP IMPATTs

J. P. Banerjee, and S. K. Roy J. N. Bhar

Commemoration Symp.

on Advances in Radio

Science in India,

Calcutta (Dec. 1986)

Proc. J. N. Bhar

Commemoration

Symp. on Advances

in Radio Science in

India, Calcutta

(Dec. 1986)

Computer studies of the

Physics of the high

efficiency of High-Low

and Low-High-Low

Indium Phosphide

Impatts having impurity

charge bumps


K. Roy

National Seminar on

the Physics of

Semiconductors and

Devices, Jaipur, pp.

241-246 (Jan. 1985)

Proc. National

Seminar on the

Physics of

Semiconductors

and Devices,

Jaipur, pp. 241-246

(Jan. 1985)




Computer studies on

silicon mm-wave double

drift Impatt diodes

S. P. Pati, J. P. Banerjee, and S.

K. Roy

Symp. on Frontiers of

Communication,

Calcutta, Dec (1985)

Proc. Symp. on

Frontiers of

Communication,

Calcutta, Dec

(1985)

Numerical simulation of

Impatt diodes”, ,


K. Roy

International

Conference on the

Physics and Technology

of Compensated

Semiconductors, IIT,

Madras

Proc. of

International

Conference on the

Physics and

Technology of

Compensated

Semiconductors,

IIT, Madras, p. 56

(1985)

Potentiality of Indium

phosphide as a new

material for Impatt

diodes,

, J. P. Banerjee, S. P. Pati and

S. K. Roy

International

Conference on Physics

and Technology of

Compensated

Semiconductor, IIT,

madras, p.62 (1985).

Proc. of

International

Conference on

Physics and

Technology of

Compensated

Semiconductor, IIT,

madras, p.62

(1985).

A study on negative

resistance profiles of

double drift diodes

J. P. Banerjee, S.P.Pati and S.

K. Roy

National Seminar on the

Physics of

Semiconductors and

Devices, Indian Institute

of Science, Bangalore,

Jan 3-7, (1984)

Proc. National

Seminar on the

Physics of

Semiconductors

and Devices, Indian

Institute of Science,

Bangalore, Jan 3-7,

(1984)

A study of the effect of

mobile space charge on

the extension of

avalanche zone and

microwave conversion

efficiency of GaAs and

InPImpatt diodes


K. Roy

IETE Symposium on

Microwave

Communication,

Calcutta, April 8-9,

(1983).

Proceedings of

IETE Symposium

on Microwave

Communication,

Calcutta, April 8-9,

(1983).

Computer studies of

microwave properties of

double drift Indium

Phosphide Impatt diodes

J. P. Banerjee, S. P. Pati and

S.K.Roy

silver Jubilee

Symposium on

Electronics and

Communication, IIT,

Bombay,(Feb, 1983)

Proc. of silver

Jubilee Symposium

on Electronics and

Communication,

IIT, Bombay, pp.




10-11 (Feb, 1983)

A Computer study on

millimeter wave

performance of silicon

double drift diodes of

different doping profiles

J. P. Banerjee, S.P. Pati and S.

K. Roy

Silver Jubilee

Symposium on

Electronics and

Communication, IIT,

Bombay, pp. 1-6 (Feb

1983).

Proc. Silver Jubilee

Symposium on

Electronics and

Communication,

IIT, Bombay, pp. 1-

6 (Feb 1983).

A computer study of the

breakdown voltage and

width of avalanche

multiplication zone for

n+pp

+ Indium Phosphide

Devices

J. P. Banerjee, S.P.Pati and S.

K. Roy,

Silver Jumble Physics

Symposium,

Department of Atomic

Energy, BARC,

Bombay, pp. 493-494

(1981-82)

Proc. Silver Jumble

Physics

Symposium,

Department of

Atomic Energy,

BARC, Bombay,

pp. 493-494 (1981-

82)

Effect of crystal

orientation on the

performance of double

drift GaAs Impatt diodes


K. Roy

Silver Jubilee Physics

Symposium,

Department of Atomic

Energy, BARC,

Bombay, pp. 495-496

(1981-82)

Proc. Silver Jubilee

Physics

Symposium,

Department of

Atomic Energy,

BARC, Bombay,

pp. 495-496 (1981-

82)

A study of the

enhancement of

efficiency and small

signal negative

resistance in mm-wave

silicon DDRs by highly

doped regions near the

metallurgical junction


K. Roy

International

Symposium on

Microwave and

Communication, IIT,

Kharagpur, p. 322

(1981)

Proc.

International

Symposium on

Microwave and

Communication,

IIT, Kharagpur, p.

322 (1981)

A study on the reduction

of avalanche zone width

and efficiency

enhancement of silicon

DDRs by a thin highly

doped region near the

metallurgical junction


K. Roy

Dept. of Atomic Energy

Symposium on Solid

State Physics, New

Delhi, p. 151 (1980).

Proc. Dept. of

Atomic Energy

Symposium on

Solid State Physics,

New Delhi, p. 151

(1980).




Journal:

Title of the

Paper

Author List Name of the

Journal

Volume, No., Page,

Year Review on

Theoretical

Background,

Fabrication

Techniques,

Methodologies and

Applications of

Microfluidic Devices

and Nanofluidic

Devices

Subhadeep

Mukhopadhyay, J.P

Banerjee

Journal of

Nanoscience,

Nanoengineering

and Applications

ISSN: 2231-1777(online),

ISSN: 2321-5194(print) Volume

5, Issue 3,2015.

Experimental Studies

of Surface-driven

Capillary Flow in

PMMA Microfluidic

Devices prepared by

Direct Bonding

technique and Passive

separation of

Microparticles in

Microfluidic

Laboratory-on-a-chip

Systems

SubhadeepMukhopadhya

y, J. P. Banerjee,

AshishMathur, M.

Tweedie , J. A.

Mclaughlin and

SusantaSinha Roy

Surface Review and

Letters, World

Scientific

Publishing

Company

DOI:

10.1142/S0218625X1550050X,

Vol. 22, No. 3 (2015) 1550050,

2015

A Four-Step Iterative

Design Optimization

Technique for DLHL

IMPATTs

Suranjana Banerjee,

Aritra Acharyya, Monojit

Mitra and J. P. Banerjee

IETE Journal of

Research [India],

Taylor & Francis

Vol 60, Issue 4, 2014

Quantum Drift-

Diffusion Model for

IMPATT Devices

AritraAcharyya,

SubhashriChatterjee,

JayabrataGoswami,

Suranjana Banerjee and J.

P. Banerjee

Journal of

Computational

Electronics

vol. 13, pp. 739-752, 2014

Estimation of Most

Favorable Optical

Window Position

Subject to Achieve

Finest Optical Control

of Lateral DDR

IMPATT Diode

Designed to Operate

at W-Band

AritraAcharyya,

JayabrataGoswami,


P. Banerjee

Radioengineering vol. 23, no. 2, pp. 739-753,

2014




Optical Control of

Large-Signal

Properties of

Millimeter-Wave and

Sub-Millimeter-Wave

DDR Si IMPATTs

AritraAcharyya,


P. Banerjee

Journal

Computational

Electronics

vol. 13, pp. 408-424, 2014

Influence of Skin

Effect on the Series

Resistance of

Millimeter-Wave of

IMPATT Devices

AritraAcharyya,


P. Banerjee

Journal

Computational

Electronics,

vol. 12, issue 3, pp. 511-525,

2013

Effects of liquid

viscosity, surface

wettability and

channel geometry on

capillary flow in SU8

based microfluidic

devices


y , J.P. Banerjee and S.S.

Roy

International

Journal of Adhesion

& Adhesives

42 (2013) 30–35

Potentiality of

Semiconducting

Diamond as Base

Material of

Millimeter-Wave and

Terahertz IMPATT

Devices

AritraAcharyya,

Suranjana Banerjee andJ.

P. Banerjee

Journal of

Semiconductors

vol. 35, no. 3, pp. 034005-1-11

Large-Signal

Characterization of

DDR Silicon

IMPATTs Operating

up to 0.5 THz

AritraAcharyya,JitChakra

borty, Kausik Das,

SubirDatta, Pritam De,


P. Banerjee

International

Journal of

Microwave and

Wireless

Technologies,

vol. 5, no. 5, pp. 567-578, 2013

Large-Signal

Characterization of

DDR Silicon

IMPATTs Operating

in Millimeter-Wave

and Terahertz Regime

AritraAcharyya,JitChakra

borty, Kausik Das,

SubirDatta, Pritam De,


P. Banerjee

Journal of

Semiconductors,

vol. 34, no. 10, 104003-8, 2013

Diamond Based DDR

IMPATTs: Prospects

and Potentiality as

Millimeter-Wave

Source at 94 GHz

Atmospheric Window

AritraAcharyya,

KoyelDatta, Raya Ghosh,

MonalisaSarkar,

RoshmySanyal, Suranjana

Banerjee and J. P.

Banerjee

Radioengineering, vol. 22, no. 2, pp. 624-631,

2013

Effect of Photo-

Irradiation on the

Noise Properties of

AritraAcharyya,


P. Banerjee

International

Journal of

Electronics 2013

DOI:

10.1080/00207217.2013.830460

.




Double-Drift Silicon

MITATT Device

A Proposed

Simulation Technique

to Study the Series

Resistance and

Related Millimeter-

Wave Properties of

Ka-Band Si

IMPATTs from the

Electric Field Snap-

Shots

AritraAcharyya,


P. Banerjee

International

Journal of

Microwave and

Wireless

Technologies

vol. 5, no. 1, pp. 91-100, 2013

Noise Performance of

Heterojunction DDR

MITATT Devices

Based on Si~Si1-xGex

at W-Band

Suranjana Banerjee,


Banerjee

Active and Passive

Electronic

Components [USA],

vol. 2013, pp. 1-7, 2013.

Effect of Junction

Temperature on the

Large-Signal

Properties of a 94

GHz Silicon Based

Double-Drift Region

Impact Avalanche

Transit Time Device

AritraAcharyya,


P. Banerjee

Journal of

Semiconductors

[China], Accepted,

Publication

Schedule: vol. 34, issue 1, 2013

Effects of Channel

Aspect Ratio, Surface

Wettability and

Liquid Viscosity on

Capillary Flow

Through PMMA

Sudden Expansion

Microchannels


y, J. P. Banerjee and S. S.

Roy

Advanced Science

Focus, American

Scientific

Publishers,

Vol. 1, pp. 1–6, 2012

Optical Control of

Millimeter-wave

Lateral Double-Drift

Region Silicon

IMPATT Device

AritraAcharyya,


P. Banerjee


2012

Large-Signal

Simulation of 94 GHz

Pulsed DDR Silicon

IMPATTs Including

the Temperature

Transient Effect

AritraAcharyya,


P. Banerjee


2012

Design and simulation AritraAcharyya and J. P. Journal of ], vol. 14, issue 7 - 8, pp. 630-




of silicon carbide

poly-type double-drift

region avalanche

photodiodes for UV

sensing

Banerjee Optoelectronics and

Advanced Materials

[Romania

639, July-August 2012

Optical Control of

Millimeter-wave

Double-Drift Region

Silicon IMPATT

Device

AritraAcharyya,


P. Banerjee

Radioengineering [Czech and Slovak], Revised on

20th

August, 2012

Potentiality of

IMPATT Devices as

Terahertz Source: An

Avalanche Response

Time Based Approach

to Determine the

Upper Cut-off

Frequency Limits


Banerjee

IETE Journal of

Research [India]

Accepted, Publication Schedule:

March-April 2013

Analysis of Photo-

Irradiated Double-

Drift Region Silicon

Impact Avalanche

Transit Time Devices

in the Millimeter-

wave and Terahertz

Regime


Banerjee,

Terahertz Science

and Technology

[China]

vol. 5, no. 2, pp. 97-113, 2012

Effect of Package

Parasitics on the

Millimeter-wave

Performance of DDR

Silicon IMPATT

Device Operating at

W-band

AritraAcharyya,


P. Banerjee,

Journal of Electron

Devices [France],

vol. 13, pp. 960-964, 2012

Calculation of

Avalanche Response

Time for Determining

the High Frequency

Performance

Limitations of

IMPATT Devices

AritraAcharyya,


P. Banerjee

Journal of Electron

Devices [France],

vol. 12, pp. 756-760, 2012

Dependence of DC

and Small signal

Properties of Double

Drift Region Silicon

IMPATT device on


Banerjee and J. P.

Banerjee

Journal of Electron

devices,

Vol.12, pp. 725-729, (2012)




junction temperature

Effect of tunneling

current on mm-wave

IMPATT devices

A.Acharyya, M.

Mukherjee and J. P.

Banerjee

International

Journal of

Electronics,

(in press),(2012).

Heat sink design for

IMPATT diode

sources with different

base materials

operating at 94 GHz

AritraAcharyya, Jayanta

Mukherjee, Moumita

Mukherjee and J. P.

Banerjee

Archives of Physics

Research”,

Vol 2(1), pp.107-126, (2011).

A comparative study

on the effect of

optical illumination

on Si1-xGex and Si

based DDR IMPATT

diode at W-band

Aritra charyya and J. P.

Banerjee

Iranian Journal of

Electrical and

Electronic

Engineering

(IJEEE)

Vol.7, No.3, pp.179-189, (2011)

Heat sink design and

Temperature

distribution analysis

forMillimeter Wave

IMPATT oscillators

using finite difference

method


Banerjee

Archives of Applied

Science Research,

Vol.3(2): pp.107-126, (2011)

Influence of Tunnel

Current on DC and

Dynamic Properties

of Silicon Based

Terahertz IMPATT

Source

AritraAcharyya, M.

Mukherjee and J. P.

Banerjee

Terahertz Science

and Technology

vol. 4, no. 1, pp. 26-41,

March,(2011).

Noise in Millimeter-

wave Mixed

Tunneling Avalanche

Transit Time Diodes

AritraAcharyya, Moumita

Mukherjee and J. P.

Banerjee

Archivesof Applied

Science Research

[India],

vol. 3, issue 1, pp. 250-266,

2011

Design and

optimization of pulsed

mode Silicon based

DDR IMPATT diode

operating at 0.3 THz

AritraAcharyyaand J. P.

Banerjee

International

Journal of

Engineering Science

and Technology

Vol.3, No. 1, pp.332-339,

(2011)

Study of Efficiency of

Ka-Band IMPATT

Diodes and Oscillator

around Optimized

Condition

Tapas kr. Pal and J. P.

Banerjee

International

Journal of

Advanced Science

and Technology

vol. 26, pp.33-45,

January,(2011).

Temperature

Distribution inside

A. Acharyya, B. Pal and

J. P. Banerjee

International

Journal of

vol. 2, issue 10, pp. 5142-5149,

(2010)




Semi-infinite Heat

sinks for IMPATT

sources

Engineering Science

and Technology

Design of Bias Filter

For Waveguide

Structures of

Millimeter Wave Si-

IMPATT diode

oscillators at 94 GHz

(W-band)

AritraAcharyya, Arijit

Das and J. P. Banerjee

Journal of

Electronic

Engineering

Research

Vol. 2, No. 4, pp.543-

552,(2010)

Heat Sink

Temperature Profile

of Ring Geometry

DDR IMPATT Diode

A. Acharyya, J. P.

Banerjee

Journal of

Telecommunication

s

vol. 6, issue 1, pp. 27-31,

(2010).

Noise Performance of

Millimeter-wave

Silicon based Mixed

Tunneling Avalanche

Transit Time

(MITATT) Diode

AritraAcharyya, M.

Mukherjee, and J. P.

Banerjee

World Academy of

Engineering Science

and Technology

vol. 4, no. 8, pp. 861-868,

(2010).

Comparison between

2-D temperature

distribution analysis

inside a semi-infinite

copper heat sink for

mesa and ring

structure of Si-

IMPATT diodes using

analytic method and

finite difference

method

AritraAcharyya, B. Pal

and J. P. Banerjee

International

Journal of

Electronic

Engineering

Research

Vol.2, No. 4, pp.553-

567,(2010).

Modeling,

Simulation,

Optimization and

Experimental

verification of the

performance of Ka-

band Resonant-Cap

IMPATT Oscillator

Tapas kr. Pal, J. V. Prasad

and J. P. Banerjee

International

Journal of

Engineering Science

and Technology”,

vol. 2, no. 10, pp. 5440-5451,

(2010).

Study of various

Tuning Properties and

Injection Locking of

Resonant-Cap

IMPATT Oscillator

Tapas kr. Pal, J. V. Prasad

and J. P. Banerjee

International

Journal of

Engineering and

Technology

vol. 2, no. 5, pp. 329-335,

(2010).




A Comparative Study

On Indium

Phosphide and α-

Gallium Nitride based

IMPATT oscillators

for Terahertz

Communication

JayantaMukhopadhyay,

Soumen Banerjee,

Moumita Mukherjee and

J.P.Banerjee

Journal of

Telecommunicati

Vol.3, Issue 1, pp. 14-21

,(2010).

Design Fabrication

and RF

Characterization of

Ka-band Silicon

IMPATT diode

Tapas kr. Pal and J. P.

Banerjee

International

Journal of

Engineering Science

and Technology

vol. 2, no. 9, pp. 4775-4790,

(2010)

Studies on the

performance of Wz-

GaN DDR IMPATT

diode at optimum bias

current for THz

frequencies

SoumenBanerjee,

Moumita Mukherjee and

J. P. Banerjee

International

Journal of

Advanced Science

and Technology

Korea, Vol 16, March ,(2010).

Studies on optical

modulation of III-V

GaN and InP based

DDR IMPATT diode

at sub-millimeter

wave frequency

Soumen Banerjee and J.

P. Banerjee

International

Journal of

Engineering Science

and Technology

Vol 2(7), pp. 2790-2801, (2010)

DDR Pulsed

IMPATT sources at

MM-wave window

frequency: high


MoumitaMukherjee

,Soumen Banerjee and J.

P. Banerjee

International

Journal of

Advanced Science

and Technology”

Korea, Vol 19, pp.1-12, March

(2010).

Studies on optical

modulation of III-V

GaN and InP based

DDR IMPATT diode

at sub-millimeter

wave frequency

Soumen Banerjee and J.

P. Banerjee

International

Journal of

Engineering Science

and Technology

Vol 2(7), pp. 2790-2801, (2010)

DDR Pulsed

IMPATT sources at

MM-wave window

frequency: high


MoumitaMukherjee

,Soumen Banerjee and J.

P. Banerjee

International

Journal of

Advanced Science

and Technology”

Korea,

Vol 19, pp.1-12, March (2010).

Design, Analysis and

Simulation of

S. Karmakar and J. P.

Banerjee

V U Journal of

Physics” (2004).




140GHz p+-n-n

+ Si1-

XGeX/Si Hetero-

structureImpatts


analysis of the

thermoelectric power

in Ultra-thin films of

Non-Parabolic

Semiconductors in the

presence of an

arbitrarily oriented

magnetic Field

K. P. Ghatak, J. P.

Banerjee and B.Nag,

ActaPhysica

Universities

Commenianae”,

Vol. 39, pp. 31-40 (1998)

The carrier

contribution to the

Elastic Constant in

Small Gap Materials

K.P. Ghatak, J. P.

Banerjee and B. Nag

Journal of Applied

Physics, USA

Vol. 83(3), pp. 1420-1425

(1998)

Computer studies of

quasi read gallium

arsenide Impatt diode

including the effect of

space charge

J. P. Banerjee, S. Ghosh,

B. Nag and K.P. Ghatak,

International

Journal of

Electronics (UK)

Vol. 82, No. 4, pp.335-345

(1997).

On the electronic

contribution to the

elastic constants of Bi

in the presence of an


quantizing magnetic

field : Theory and

Suggestion for

experimental

Determination

K. P. Ghatak, J. P.

Banerjee and B. Nag

ActaPhysica

Universities

Comenianae

Vol. 30, p.71 (1996).


analysis of the carrier

contribution to the

elastic constants on

Non-Linear Optical

and Opto electronic

materials

K.P. Ghatak, J. P.

Banerjee, M. Mitra and B.

Nag

Non Linear Optics pp. 1-27 (1996).

A simple analysis of

the electronic

contribution to the


ultrathin films of

Bismuth in the

presence of a

J. P. Banerjee, B. Nag and

K.P. Ghatak

Physica Status

Solidi

Vol.93, p.205 (1996)




quatizing magnetic

field

On the carrier

contribution to the


nonlinear Optical and

Optoelectronic

compounds under

cross field

configuration :

Theory and

suggestion for

experimental

determination

K.P. Ghatak, J. P.

Banerjee, B. Goswami

and B. Nag

Nonlinear Optics Vol.16, p. 193 (1996)

The electronic

contribution to the


ultrathin films of

ternary and

quarternary alloys in

the presence of an


magnetic field :

Theory and

suggestion for

experimental

determination

K.P. Ghatak, J. P.

Banerjee and D.

Bhattacharyya

Nanotechnology

(IOP Group, UK)

Vol.7, p. 110 (1996).

On the Einstein

relation for the

diffusivity – mobility

ratio in n-channel

inversion layers on

non-linear optical

materials in the

presence of a parallel

magnetic field :

Theory and

suggestion for

experimental

determination

, K.P.Ghatak, J. P.

Banerjee, M. Mitra and B.

Nag

Nonlinear Optics pp. 1-16 (1996)

Studies on avalanche

phase delay and the

admittance of an

optically illuminated

Indium Phosphide

J. P. Banerjee, R.

Mukherjee, J.

Mukhopadhyay and P.N.

Mallik

Physica Status

Solidi (a)

Vol. 153, pp. 567-579 (1996)




Avalanche Transit

Time Diode at

millimeter-wave

window frequencies

Electronic

contribution to the

Magneto-elastic

Constants in Quantum

Wells of Bismuth

K.P. Ghatak, J. P.

Banerjee and B. Nag

Journal of Wave

Material Interaction,

USA

Vol.10, No.2, pp. 11-34 (1995)

A simple Theoretical

Analysis of the

Faraday Rotation

Mass in Non-

Parabolic Material

K.P. Khatak, B. Nag,

M.Mitra and J. P.

Banerjee

Journal of Wave

Material Interaction

(USA)

Vol. 10, No.2, pp.11-34 (1995)

Calculation of the

shift of avalanche

Transit time Phase

delay due to optically

injected carriers in

Indium Phosphide

Avalanche Diodes


Mukherjee

Electronic Letters

(UK)

Vol. 30, p.1716 (1994).

Effect of electron and

hold dominant

photocurrent on the

millimeter wave

properties of indium

Phosphide Impatt

diode at 94 GHz

window under optical

illumination

J.P. Banerjee and R.

Mukherjee

Semiconductor

Science and

Technology (UK)

Vol.9, pp. 1-4 (1994).

Space charge

dependence of

negative resistance

avalanche layer width

and avalanche

resonance frequency

SDR p+nn

+ silicon

impatt diode with

optimized doping

profile

J. P. Banerjee, A.

Ganguly and S. P. Pati

Physica Status

Solidi (a)

(Germany), (1994).

Avalanche and Drift

layer contributions to

the negative

resistance of

millimeter wave

R. Mukherjee and J. P.

Banerjee

International

Journal of

electronics (UK)

Vol. 76, pp. 589-600 (1994).




p+nn

+InPImpatt diode

for different current

densities

Substrate thinning for

fabrication of Impatt

diodes

A. Ganguly, J. P.

Banerjee and S. K. Roy

Special Issue on

Microwave and

mm-wave sources

and applications,

journal of IETE

(India)

Vol.40, No.1, PP.53-54 (1994).

Computer modeling

of optically controlled

submicron Indium

Phosphide Impatt

Device


Mukherjee

Special issue of the

Journal of

Mathematical

Modeling and

Scientific

Computing (USA)

pp. 1067-1068 (1993).

Experimental studies

on the process steps

for fabrication of

Impatt diode and

corresponding study

of the dc breakdown

voltage

J. P. Banerjee, M. Mitra,

A. Ganguly and S. K. Roy

Journal of IETE

(India)

Vol. 10, No.4 (1993)

Studies on the high

frequency properties

of <111>, <110> and

<100> oriented

GaAsImpatt diodes

”, J. P. Banerjee, R.

Mukherjee, S. P. Pati and

S. K. Roy

Appl. Phys. A

(Germany)

Vol. 56, pp. 375-380 (1993)

Computer simulation

of the small signal

admittance and

negative resistance of

Double Avalanche

Region Impatt diode

J. P. Banerjee and S. K.

Roy

Appl. Phys. A

(Germany)

Vol. 56, pp. 575-580 (1993).

Simulation of the

diffusion profile for

enhancement of

negative resistance

and efficiency of

Silicon Single Drift

Region Impatt Diodes

J. P. Banerjee, R.

Mukherjee, A. Ganguly,

M. Mitra and S. K. Roy

Phys. Stat. Sol. (a)

(Germany)

Vol. 132, pp. 217-223 (1992).

Properties of 35 GHz

InP DDR

J. P. Banerjee, S. P. Pati

and S. K. Roy

Proc. Of

International

Society for Optical

Engineering, SPIE

(USA)

Vol. 1523, pp. 69-73 (1991).




Effect of carrier

diffusion on the

properties of GaAs

and InP avalanche

diodes

J. P. Banerjee, R.

Mukherjee, M. Mitra and

S. K. Roy

Proc. Of

International

Society for Optical

Engineering(SPIE),

(USA

Vol. 1523, pp. 172-174 (1991).

High frequency

numerical analysis of

DAR Impatt diode

S. P. Pati, J. P. Banerjee

and S.K. Roy

Semiconductor

Science and

Technology (UK)

Vol.6, pp. 777-783 (1991).

Design and

optimization of the

doping profile of

double drift Low-

High-Low Indium

Phosphide Diode


Roy

Semiconductor

Science and

Technology (UK)

Vol. 6, pp. 663-669 (1991)

Computer simulation

of the small signal

admittance and

negative resistance of

Double Avalanche

Region Impatt Diode


Roy

Numerical Analysis

of Semiconductor

Devices and

Integrated Circuits

(NASECODE

VII)”, Colorado

(USA)

Vol.7, pp. 215-216 (1991).

Comparison of

theoretical and

experimental 60 GHz

Silicon Impatt diode

performance

J. P. Banerjee, J.F. Luy

and F. Schaffler

Electronics Lett.

(UK)

Vol.27, No.12, pp. 1049-1051

(1991).

Properties of Gallium

Arsenide and Indium

Phosphide Impatts at

Microwave and

Millimeter-wave

Frequencies


Roy

Bull. Mater. Science

(India)

Vol.13, pp. 113-119 (1990)

High power design

considerations of mm-

wave double Read

Impatt diodes

J. P. Banerjee, G. N. Das,

S. P. Pati and S. K. Roy

Journal of

Semiconductor

Material and

Devices (India)

Vol. 1, No.1, pp. 97-102 (1989)

Variation of High

frequency negative

resistance of silicon

n+pp

+ and

GaAsp+nn

+Impatt

diodes with

enhancement of

reverse saturation

current

N. Mazumder, J. P.

Banerjee and S. K. Roy

Phys. Stat. Sol. (a)

(Germany)

Vol. 116, pp. 415-424 (1989).




The distribution of

negative resistivity in

the active layer of

millimeter-wave

double drift regions

diodes


and S. K. Roy

J. P. Banerjee, S. P.

Pati and S. K. Roy

Vol. 22, pp. 959-964 (1989).

High frequency

characterization of

double drift region

InP and GaAs

IMPATT Diodes


and S. K. Roy

Appl. Phys. A.

(Germany)

Vol. 48, pp 437-443 (1989)

Computer simulation

experiment on mm-

wave properties of

InPIMPATTs


and S. K. Roy

Phys. Stat. Sol, (a),

Germany)

Vol.109, p. 359 (1988).

Effect of ionization

rates on the

breakdown conditions

of InP, GaAs and Si

avalanche diodes


and S. K. Roy

Current Trends in

Physics of

Materials, World

Scientific Co.,

Singapore

pp. 203-207 (1987)

A Computer study on

the high frequency

properties of silicon

mm-wave single drift

Impatt diode


and S. K. Roy

Journal of IETE

(India)

Vol.33, pp. 159-163 (1987)

A Computer analysis

of the distribution of

high frequency

negative resistance in

the depletion layer of

Impatt diodes


and S. K. Roy

Numerical Analysis

of Semiconductor

Devices and

Integrated Circuits

(NASECODE IV),

Dublin (Ireland)

p.494 (1985)

Effect of impurity

charge bumps on the

d.c. and microwave

properties of high

efficiency silicon

double drift Impatt

diodes

S.P.Pati, J. P. Banerjee

and S. K. Roy

Journal of IETE

(India)

Vol. 31, pp. 22-27 (1985)

Computer studies on

the space charge

dependence of

avalanche zone width

and conversion

efficiency of single

drift p+nn

+ and n

+pp

+


and S. K. Roy

Appl. Phys. A.

(Germany)

Vol. 35, pp. 125-128 (1984).




Indium Phosphide

Impatts

A computer study of

the crystal orientation

dependence of

avalanche zone width

and efficiency of

single and double

drift GaAsImpatt

diode

S.P. Pati, J. P. Banerjee

and S. K. Roy

Indian J. Pure and

Appl. Phys

Vol. 21, pp. 558-62 (1983)

A Study of Indium

Phosphide single drift

and double drift

avalanche diode from

computer analysis of

field and current

profiles


and S. K. Roy

Indian J. Pure and

Appl. Phys

Vol. 21, pp. 661-64 (1983).

Computer analysis of

d.c. field and current

density profiles of

DAR Impatt diode

D.N.Dutta, S.P. Pati, J. P.

Banerjee, B.B. Pal and S.

K. Roy

“IEEE Trans.

Electron Devices

Vol. ED-29, pp. 1812-16 (1982)

LIST OF BOOKS

1. “Electric Circuits and Electron Devices” by J. P. Bandyopadhyay, VikasPublishing,

New Delhi (2011).

2. “Basic Electrical and Electronics Engineering” (Vol.II) by J. P. Bandyopadhyay,

Vikas Publishing, New Delhi (2011)

3. “Solid State Electronic Devices” by J. P. Bandyopadhyay, VikasPubllishing, New

Delhi (2010).

4. “Basic Electrical and Electronics Engineering” (Vol.I) by J. P. Bandyopadhyay, Vikas

Publishing, New Delhi (2010)

5. “ Basic Electronics Engineering” by J. P. Bandyopadhyay, Vikas Publishing, New

Delhi (2010)

Work Experience:

a. Academic: 45 years

dr. jyoti prasad bandyopadhyay - nshm...

Documents