cobham microwave · z=rs+lp.ω 7 diodes bu presentation january 2013 ... (shunt design forward...

Cobham MicrowaveDiodes BU presentation0

Cobham Microwave …

The most important thing we build is trust

Diodes BU Presentation

January 2013


• Basis• Main parameters• Manufacturing step• Packaging• Applications• Diodes dedicated to MRI• Diodes dedicated to Space market

Silicon Diodes

January 2013

Cobham Microwave

•I layer determines Vbr•I layer thickness (W):

1 to 300 µm• Mesa technology• Oxide or glass passivation• Gold based pads• Normal polarity : PIN• Reverse polarity : NIP

1- PIN diodes basis:

Metal pad (anode)

Glass or oxide

passivation

Metal pad (cathode)

I Layer

N+ Layer

P+ Layer

2 January 2013Diodes BU presentation

Cobham MicrowaveJanuary 2013Diodes BU presentation3

1- PIN diodes basis:

Reverse Mode:• Vbr: breakdown voltage, large increase of reverse current over 10µA • Vbr is directly related to W• Vbr measured @ Ir=10 µA • Vr: maximum applied reverse voltage defined about 0.9Vbr• Ir @ Vr

Cobham Microwave

Forward Bias :

• Diode is similar to a variable resistance • Rs depends of the current If• Rs will impact:

loss in serie switch design

isolation in shunt design

January 2013Diodes BU presentation4

2- Main parameters: Rs

-ICurrent Generator

+

LCR meter

Rs

0,1

1,0

10,0

1 10 100

Rs [

Oh

ms]

If [mA]

Rs versus If 120 MHz

Cobham Microwave

Reverse Bias :

• Cj is junction capacitance• Ct=Cj+Cpakaging• Cj decreases untill punch-through voltage

• Cj min is related to 1/W and Surface S : (ɛS/W)• Cj will impact: loss in shunt design

isolation in serie design


-R

VCapacitance

meter

+

Ct

2- Main parameters: Cj, Ct

0

0,2

0,4

0,6

0,8

1

0 5 10 15 20

Ct

[pF]

Vr [V]

Ct versus Vr@ 1 MHz DH50101DH50103DH50104DH50106

Cobham Microwave

Reverse Bias :

• Rp shunts parallel Cj capacitance• For VVpt Rp max• Higher Rp is requested for better performances


-R

VVoltage

Generator

+

LCR meter

Rp

2- Main parameters: Rp

1E+03

1E+04

1E+05

1E+06

1E+07

0 5 10 15 20 25 30

Rp

[O

hm

s]

Vr [V]

Rp versus Vr120 MHz

30 MHz

Cobham Microwave

The parasitic inductance, Lp :

• added by the bonding • limits the lowest impedance value.• Values from 0.1nH to 1.0nH depending on

the package and type of bonding

• No important influence on PIN diode behaviour at frequency below 1GHz.

• More important than Rs at high frequency Z=Rs+Lp.ω


2- Main parameters: Lp


2- Main parameters: l

Minority carrier lifetime

TlV2

V1=10%V2

• Physical property of semi conductor• Electrons/holes lifetime before recombination when diode turns from

forward to reverse

• Release on quality of material and diode volume (W & S)• Measured @ If=10mA & Ir=6mA


2- Main parameters: Pin & Pd

Power handling and Power dissipating:

PIN diode control RF power: PinA small part of power is dissipated inside the diode Pd=Pin- Pout+ PDC increase of junction temperature

Pin, Pout : CW or pulse power with

• Pd=(Tj-Ta)/Rth (thermal resistance)Ta: ambient temperature usually 25°C

Tj: maximum junction temperature usually 175°C

• Pd = IRF2 Rs + IDCVDC IDC & VDC are negligible

≈ IRF2 Rs (serie design forward bias)

(shunt design forward bias)

avs P

Z

R

0

avPZ0

sR4

%*DCPP inav


2- Main parameters: Rth

Thermal Resistance

• Measures the removal of heat by conduction from the diode through the package• Measured with 0.25 to 1Watt & If=3mA • Depends on die size and package

M208 ~ 50°C/W MELF ~ 30°C/W BH158 ~ 3°C/W

Rth

If

Vr

Vr1

Vr2


Min frequency :

Must be higher than the I region transit time frequency (The transit time = time for carrier to cross the I region)

(f : MHz ; w= I layer, µm),

Using a diode at a too low frequency will increase the distortion

Example EH80210 : I layer 200µm fmin= 32.5kHzEH50033 : I layer 3µm fmin =144MHz

Max frequency :

When the diode is reverse biased, it should not dis-adapt the system

(Ct, total capacitance, pF)

Example DH80210 : Cj(50V) = 3pF fmax 1 GHzEH50033 : Cj(50V) = 0.1pF fmax 30 GHz

2- Main parameters: frequency limits

t0 C.Z..2

1f

W²

1300f


3- Manufacturing Steps:

– Step 1: Epitaxy• Growth of N+ , I & P+ layer on a bulk material

– Result : a complete and homogeneous wafer

– Step 2: Front End

• Photolithography• Etching of the wafer• Oxide or Glass Passivation• Rear & Back side metallization• Dicing• Test & characterization

– Result : a bare die

– Step 3: Back end• For packaged diodes only

– Result : a packaged diode

Bulk

material

Shipment to

customer

Packaged

diodes

Step 1:

Epitaxy

Step 2:

Front End

Step 3:

Back End(Option)

Bare Die

Epitaxied wafer

Shipment to

customer

January 2013

Cobham Microwave

Protection layer

P+

I

N+

Protection layer

P+

N

N+

P+

N2

N1

N+

PIN

VARICAP

VARACTOR

VPH

Step 1 : Epitaxial layers For Diodes:


January 201313 Diodes BU presentation

Cobham Microwave

Step 1Epitaxy

Step 2Front End

Step 3Back End

Shipment to

customer

Shipment to

customer

Shipment to

customer

Packaged diodes

Bare Die

Bulk

material

Epitaxied wafer

– Step 2: Front End

• Photolithography

• Etching of the wafer

• Glass Passivation

January 2013


14 Diodes BU presentation

Cobham Microwave

Step 1Epitaxy

Step 2Front End

Step 3Back End

Shipment to

customer

Shipment to

customer

Packaged diodes

Bare Die

Bulk

material

Epitaxied wafer

– Step 2: Front End • Photolithography

• Rear Metallization

• Back metallization

• Dicing

– Step 3: Back end• Packaging of the die

Shipment to

customer

January 2013




• Assembly Capability

– Bonding:

• Thermocompression bonding: 12, 18 & 25 µm wires• Ball, Thermosonic or Wedge bonding:

– Gold only, Up to 200 µm ribbon

• Thermocompression: – From 12 µm wire diameter

– up to 2 mm ribbon width

– Brazing:

• AuSn (280°C), AuGe (345°C)

– Gluing:

• Conductive (84-1 LMISR4), Insulated (84-3)…

– Sealing:

• AuSn Brazing sealing,• Electrical sealing


January 2013


High Rel. Screening

•Reliability

– ESA Standard• Generic specification ESCC5010

(discrete microwave semiconductor)• Detail specifications

– Customer specifications

High Rel Screening capability

– Climatic chambers– Life tests (HTRB, PBI,…)– Die shear tests– Pull tests– Gross and fine leakage– Vibrations and accelerations test– PIND tests (Particle Impact Noise

detection)

Die share

PIND test

Pull test

Acceleration test

Leakage test

January 2013


Cobham Microwave

4- Diodes Packaging options:

2 CERAMIC MELF

1 CERAMIC PILL

4 Ceramic SURFACE MOUNT

3 PLASTIC

5 SWITCH


http://www.google.fr/imgres?imgurl=http://upload.wikimedia.org/wikipedia/de/thumb/d/d9/EADS_Astrium_Logo.svg/800px-EADS_Astrium_Logo.svg.png&imgrefurl=http://de.wikipedia.org/wiki/Datei:EADS_Astrium_Logo.svg&h=337&w=800&sz=23&tbnid=XKv0DBo-kXQi7M:&tbnh=60&tbnw=143&prev=/images?q=astrium+logo&usg=__awSuCXaF1xnk2TpQI-vYh25KjdU=&ei=VrCcS4KvDpPy0gTdl-niAQ&sa=X&oi=image_result&resnum=6&ct=image&ved=0CCAQ9QEwBQ

Cobham Microwave

T Standard Microwave Package For Hi-rel (-> 18 Ghz)

T Very Good Electrical And Thermal Performances

T Hermetic

T Expensive

T Round Shape, Smd Nightmare !

M208b F27d

4- PIN Diodes Packaging options:

1-Ceramic pills


Cobham Microwave

T Standard Pin Diode Package For Power Applications (-> 2 GHz)

T Good Electrical And Thermal Performances

T Hermetic

T High Volume Capability / Moderate Cost

T SMD, Lead Free

T Only For Selected P/N

2-Ceramic MELF



Cobham Microwave

SOT23

DHxxxxx-51

DHxxxxx-53

DHxxxxx-54

DHxxxxx-55

T Standard Economical Package For Low Power Applications (-> 2 GHz)

T Not Hermetic But MSL1 Qualified

T High Volume Capability / Low Cost

T SMD, Lead Free

T For Less Critical Applications

3-Plastic SMD



Cobham Microwave


T Plastic Package For Extended

Frequency Applications (6 GHz)

T High Integration Capability

T High Volume Capability / Low Cost

(Collective Process)

T SMD, Lead Free, MLS1

T Design Flexibility, Footprints Available

4- High Density Surface Mount/ DFN


Cobham Microwave


T Microwave Package For power handling

T Very Good Electrical And Thermal Performances :

- Grounded heat sink

- isolated heat sink, with or without connection

T Hermetic

T Expensive

5- High power package

BH141 BH300


Cobham Microwave

Ceramic Pill

(M208a)

MELF SOT/SOD DFN

Surface Mount No Yes Yes Yes

Automatic

Pick&Place

No Yes Yes Yes

Moisture Sensitivity Hermetic Hermetic MSL1 MSL1

Integration Capability + + + +++

Electrical

performances

+++ ++ + ++

Power dissipation ++++ +++ + ++

Cost 10 4 1.0 1.5

Design flexibility + - ++ +++




Diodes main popular package types

M208B BMH76

BH141

BH194

F27d BH142

BH158 BH300 BH204

SMD 4/6/8 (Melf) SOT143SOD323

All diodes can be supplied in bare dies

M208A

BH405

DFN 2L1

Cobham MicrowaveDiodes BU presentation

D H 8 0 1 2 0 - xx

EH for Die

DH for packaged Diode

Vbr class for PIN orcapacitance class for varactors

Capacitance Class

Package designation or SCD

Diode Class

DH2xx /multiplierDH5xx /SRDDH40xxx/AttenuatorDH50xxx/Pin low powerDH60xxx/limiterDH7xxxx/tuning VaractorDH80xxx/High power

Diodes reference construction :

DH80 serie :05 for 500V 10 for 1000V etc...

DH50 or DH60 serie :05 for 50V10 for 100V etc...

January 201326


Silicon Diodes Product Range1. Switch application2. Limiter application3. Attenuator Application4. Tuning Varactors5. Frequency Multiplication6. Voltage Multiplier7. MOS Capacitors

5- Applications:

January 2013


1. Switching application :– Antenna switching,

– Filter bank, agile filters…

– Market : military radio, PMR, IF control devices …

5- Applications:

January 2013

Switching

Cobham MicrowaveJanuary 2013

loss & Isolation


5- Applications: Serie Switch

Cobham MicrowaveJanuary 201330 Diodes BU presentation

5- Applications: Shunt Switch

loss & Isolation


Fast switching, low & medium power: DH50xxx series

• Thin I layer: from 2 to 50 µm• Oxide (≤100V) or glass passivation (>100V)• Breakdown voltage : from 30V to 400 V• Junction capacitance : from 25 fF to 0.8 pf typical• Serie resistance: down to 0.5 @ 10 mA• l : from 20 ns to 2 µs typical• Application from L to Ku band, power handling up 50W

Available : in die form, hermetic ceramic package, strip line and plastic packages

* Example DH50256

5.1 Switching application

January 2013


High power PIN diodes : DH80xxx series• Thick I layer: from 50 to 300 µm• Mesa design and glass passivation• Breakdown voltage : 500V to 3000 V• Low Cj for a good isolation: from 0.1 pF to 3 pF • low Rs for lower insertion Loss: Rs: 0.25 to 0.7 @ 100mA• Large minority carrier life time for low distortion

Available in die or various packages : series, shunt, flat mounted or with grounded or electrically isolated heat sink for optimal thermal behavior

High power switches : SH90xxx serie• SP2T, SP3T• Pin : 10 W to 1000W CW• 1 Mhz to 1 GHz

Pill

Stud

Isolated stud


January 2013


Stud

Pill

Isolated stud

New Items: 3000V High power Diode– DH80307 & DH80309 diodes for kiloVolt range application

– High voltage : Ir < 10 µA @ 3000V capability

– High current : up to 25A handling

– Resistance as low as 0.15Ω @ 500 mA (ref: DH80309-01)

– Capacitance as low as 2.5 pF @ - 200V (DH80307-01)

– High Carrier life time 45 µs min for low distortion

– Thermal resistance less than 3°C/W (DH80309-01)

– High power handling typical 1kW CW

– High power handling above 30kW with DC 4% tested

– Small size comparing to MACOM Diode

Available with grounded or electrically isolated heat sink for optimal thermal behavior

Switch


MACOM Cobham

January 2013


• Breakdown voltage : 50V to 1000 V• Low loss, low distortion :

– Ct from 0.3 pF to 3 pF

– Rs: 0.25 to 0.7 @ 100mA

– low inductance

– High minority carrier lifetime

• High power dissipation up to 10W

• Glass passivated PIN diode chip• Hermetically sealed package• Various Sizes SMD4, SMD6,

SMD8

• Non magnetic package option• With connection option

• DH80xx series in MELF SMD package

0

2

4

6

8

10

12

0 25 50 75 100 125 150 175

Pd [

W]

Tcase [°C]

Square MELF Diodes Maximum Dissipated Power Rating*

DH50209DH80050DH80051DH80052DH80053DH80054DH80055DH80082DH80100DH80101DH80102DH80106

*diode brazed on infinite copper heat


January 2013


New Items: DFN diodes

– Dual Flat No-lead package

– Cost effective, SMD, high volume

• Miniaturized• Flexibility (size, diode combinations)• Adaptability to board design

– Low parasitic:

• Capacitance package < 0.1 pF– Non hermetic, high reliability: MSL1 level

1 2 3 4 50 6

-25

-20

-15

-10

-5

-30

0

freq, GHz

dB

(S(2

,1))

Isolation at -10V

1 2 3 4 50 6

-0.8

-0.6

-0.4

-0.2

-1.0

0.0

freq, GHz

dB

(S(2

,1))

Insertion loss 10mA

Now available in serie and shunt configuration

Variable package size 2L1, 2L2, 3L2, and 2L0603

– Large range of Vbr: 50V to 1000 V

– Good thermal performance : 25 to 60°C/W

– Frequency up to 10 Ghz

– Complete data sheets with DC & RF characteristics

– Equivalent circuit Available

* Example DH50401-90N


January 2013


New Items: Antiparallel pair PIN Diodes:available now

– Effective passive rectifier to tune and de tune MRI tank circuit

– 2 options: single and dual antiparallel pair

– Capacitance: Ct (0V) = 1 pF typical (single pair)

– Resistance: Rsf = 1.2 Ω @ 10 mA

– Full non magnetic package

– Surface mount package BH60 & BH61

– Ref DH52076 (single pair) DH54076 (dual pair)Block diagram

BH60 BH61

January 2013

5.1 Switching application: MRI Market


– Radio receiver protector

– Mainly military: radar application

5.2 Limiter application

January 2013

F

AntennaDuplexer

Low Noise Amplifier

Switch (diodes)

Tx Amplifier

Attenuator

Medium Power Amplifier

Switch (diode)

Phase shifter

Medium Power Amplifier

Load

CIL (Circulator/Isolator/Limiter)

Limiter


Limiter : DH60xxx series

– Breakdown voltage : 25V to 200V

– Junction capacitance : from 0.1 pF to 0.7pF typical

– Low loss

– threshold @ 2.7 GHz : from + 10 to + 25 dBm

– leakage power @ 2.7 Ghz from : + 20 to + 30 dBm

– Pin CW max (W) : from 2 to up to 15W, New P/N DH60154


0

5

10

15

20

25

30

35

0 10 20 30 40 50

Pou

t [d

Bm

]

Pin [dBm]

Pout Vs Pin Pout

Frequency (GHz)

Inse

rtio

n Lo

ss (d

B)

0.0

1.0

2.0

3.0

4.0

5.0

6.0

7.0

8.0

9.0

10.0

-0.75

-0.7

-0.65

-0.6

-0.55

-0.5

-0.45

-0.4

-0.35

-0.3

-0.25

-0.2

-0.15

-0.1

-0.05

0.0

-10 V

-20 V

-35 V

-5V

0 V

January 2013



DH60154 -62N: Equivalent circuit

Wire bonding

diode

Metallic hole inductance

and Cathode brazing Alumina

substrate

Equivalent circuit is done for DFN 3L2 package in forward modeDiode is brazed on Alumina substrate


DH60154 -62N: Equivalent circuit

Forward bias


January 2013

Reverse biasLbonding = 0.62 nH

Cp = 51 fF

Lpar = 11.2 nH

Rpar = 184 Ohms

Lvia = 0.094 nH

Rdiode = 0.33 Ohms

Cj = 328 fF



Forward bias

Reverse bias

Black:Measure , Red: Simulation


Attenuator : DH40xx series

– Main application : Automatic Gain Control

– Market : CATV, repeater, radio links, UFH radio, IF control devices …

5.3 Attenuator application

January 2013

Attenuator


Attenuator : DH40xxx series

– wide dynamic range :

• From : 10 up to 700 (@ If = 100 mA down to 0.1 mA)• 3 types of diodes

– junction capacitance :

• 0.3 pF to 0.10 pF typical– Telecom, Defense & Space applications

5.3 Attenuator application

January 2013


Tuning Varactor applications:

– Main application : VCO, tunable filter

– Market : almost all telecom system

• Space• Military• Telecom …

5.4 Tuning Varactor

January 2013


Varactor hyperabrupt: DH76xxx series

– Breakdown voltage: 20V min

– Cj (4V) : from 1.2 to 15 pF

– Tuning ratio: Ct(0)/Ct(20) : 5 to 7

– Q factor: 140 to 2200

0

1

10

100

1000

0.1 1 10 100

Ct

[pF

]

V[V]

Typical total capacitance versus reverse voltage

DH71004_m208 DH71008_m208 DH71012_m208 DH71020_m208 DH71030_m208 DH71045_m208

DH71067_m208 DH71100_m208 DH71120_m208 DH71330_m208 DH71560_m208 DH71999_m208

Varactor abrupt: DH71xxx series

– Breakdown voltage: 30V min

– Cj (4V) : from 0.4 to 100 pF

– Tuning ratio: Ct(0) / Ct(30) : 3 to 5.2

– Q factor : 300 to 4500

5.4 Tuning Varactor

January 2013


SRD diodes: DH54x & DH2xx series

– SRD : DH54x series :

• Vbr : 15 V to 50 V

• Snap off time : 60ps to 150 ps typical

• Cj(6v) : from 0.3 pF to 1.5 pF

– Multiplier : DH2xx series :

• up to 25 GHz output Frequency

• 200 mW to 20 W Pout

• Snap off time : 60 to 1000 ps

Application : comb generator

5.5 Frequency multiplication application

January 2013


DH85050 & DH85100

Now available in DFN-3L1 package

– High voltage dual diode

– Vbr: 500V & 1000 V

– Very low leakage current : less than 5nA @ 1000V @ 25°C

– Low capacitance 50fF or 150fF typical

– Low reverse recovery time


Single and Multi-Pad MOS capacitors :

– up to 30 GHz

– 40 to 500V voltage range

– 0,1 to 470 pF

– temperature coefficient : 50ppm / °C

– tolerance : • standard : 20%• option : down to 2 %

– multi-pad bar series available

– standard parts and specific on request : bare die only

5.7 MOS capacitors

January 2013


Diodes main popular package types

M208B BMH76

BH141

BH194

F27d BH142

BH158 BH300 BH204

SMD 4/6/8 (Melf) SOT143SOD323

All diodes can be supplied in bare dies

M208A

BH405

DFN 2L1


Types Applications Vbr Junction Capacitance AdvantagesSeries Ref.

PIN

High power switching

500 to 3000 V Low Cj for a good isolation Cj(50V): 0,15 pF to 3 pF

Low Rs for lower ILRs : from 0,3 W to 0,7 W

DH80xxx

Fast switching 150 to 400 V Cj(50V): 0,04 pF to 0,17 pF I layer < 50µmt l : from 200 ns to 2000ns

DH50xxx

Ultra fast switching

30 to 100 V Cj(6V): 0,08 pF to 0,17 pF I layer < 10 µmt l : from 20 ns to 500 ns typical

DH50xxx

AGC,Attenuator

100V Cj(50V) : 0,1pF to 0,3 pF 1 W @ If=10 mA up to 100 W @ If=0,1 mA,10 W @ If=10 mA up to 300 W @ If=0,1 mA

DH40xxx

Limiter25 to 200 V Cj(0V): 0,14 pF to 0,45 pF Threshold @2,7 GHz:+10 to +20 dBm

Leak. power @2,7 GHz:+20 to +35 dBmPin max: 2 to 7 W

DH60xxx

Varactor

VCO (Voltage

Controlled Oscillators)

30 V, Q-factor: 300 to 4500

Cj(Vr4v): 0,4 to 100 pF Ct0/Ct30: 3,3 to 5,2 DH71xxx

45 V, Q-factor: 250 to 3000

Cj(Vr4v): 0,4 to 100 pF Ct0/Ct45: 3 to 6 DH72xxx

20 V Cj(Vr4v): 1,2 to 15 pF Ct0/Ct20: 5 to 7 DH76xxx

SRD Frequency Multiplier

25 V to 30 V Cj(6v): 0,3 pF to 12,5 pFSnap off time: 60ps to 150 ps DH54x

Up to 25 GHz Fout, 200 mW to 20 W Pout,Snap off time: 60 to 1000 ps

DH2xx

MOS Cap MOS Capacitor Up to 500V 0,1 to 470 pF Low temperature coefficient

Silicon Diode Product Line Summary

January 2013

Cobham MicrowaveCompany restricted

PIN Diode memento

Technical specificationsItems Conditions To be specify Unit Min Typical Max

Breakdown voltage : @ I r < 10 µA - V

Total capacitance : @ f = 1 MHz @ Vr = pF

Forward resistance Rsf : @ f = 120 MHz @ If = W

Minority carrier life time : If = 10 mA, Ir = 6 mA - µs

Package style :

Application :

• Switch (serie ? Parallel ?)

• Attenuator

• limiter

Frequency range

Input power : Peak W - -

Input power : CW W - -

Duty cycle :

Temperature range : °C

Cobham MicrowaveCompany restricted

Silicon Tuning Varactor memento

Items : Conditions To be specify at Unit Min Typical Max

Breakdown voltage : @ I r < 10 µA - V

Total capacitance :@ f = 1 MHz

@ Vr = 4V pF

@ Vr = 12V pF

@ Vr = 20V pF

@ Vr = 30V pF

Tuning ratio : @ f = 1 MHz

Ct 1V/Ct12V - - -

Ct 1V/Ct20V - - -

Ct 1V/Ct30V - - -

Figure of Merit : @f = 50 MHz, Vr=4V -

Temperature range : °C -

Package style :

Technical specifications


Diodes dedicated toMRI market

January 2013

Cobham Microwave

6-Diodes dedicated to MRI

PIN diodes are used as the switching element in MRI coil switches

Diodes BU presentation54

Key figures for a diode dedicated for MRI :

•avoid to distort the magnetic field linked to coils must not contain any magnetic material•must not degrade Signal to Noise Ratio when switch is off •high parallel resistance at reverse bias•low loss when switch is on•low series resistance at forward bias•High RF power handling•low thermal resistance

January 2013

Cobham Microwave

Cobham P/N case

Anti parallel diodes DH52076-01DH54076-01

BH60BH61

High voltage diode SQM1250-40NDH80052-40NDH80055-40NDH80100-40N

SMD4AM

High voltage diode SQM1450-44NDH80106-44N

SMD8AM

High voltage diode DH80106-11NDH80159-11

BH158AMBH141 (mag)

3kV diodes DH80309DH80307

DH80289 (2800V)

BH158AMAlso availableBH141 (mag)BH300 (mag)

Diodes BU presentation55

BH60 BH158AMSMD8AMSMDxAM+LEADBH61

Stud

Isolated stud

6- Diodes dedicated to MRI

January 2013


Diodes dedicated toSpace market

January 2013


Most popular packages :

M208

F27d

SILICON DIODES, MOS CAPACITOR : ESA QPL LIST

7- Diodes dedicated to Space Market


ESCC5010 Generic normSILICON DIODES: ESA QPL LIST

ESCC web site: https://escies.org/

Sub-Families Types Detail Spec. Status

Tuning Varactors DH 76 XXX 5512/023Certificate 273D

Extended

Multipliers Varactors, DH 267, 252, 256, 292, 294 5512/016

Certificate 225EExtended

PIN, Fast Switching

DH 50151 – DH 50157 5513/031

DH 50201 – DH 50209 5513/033

DH 50251 – DH 50256 5513/034

PIN, Ultra Fast Switching

DH 50033 – DH 50037 5513/032

DH 50052 – DH 50057 5513/036

DH 50071 – DH 50077 5513/037

DH 50101 – DH 50107 5513/038

MOS CapacitorsTypes 101M, 201M, 400M

and 401M5711/002

Certificate 286A VOQ in progress

7- Diodes dedicated to space Market

file:///F:/Certificats & QPL/QPL MOS DH50xx DH2xx DH76xx.pdf

Cobham Microwave

THANK YOU!

www.cobham.com/microwave
http://www.cobham.com/microwavehttp://www.cobham.com/microwave

cobham microwave · z=rs+lp.ω 7 diodes bu presentation january 2013 ... (shunt design forward...

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